WebThe CGH40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010F ideal for linear and compressed amplifier circuits. The transistor is available in a flange packages. WebCGH40010F CW Power Dissipation De-rating Curve 0 2 4 6 8 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1 Downloaded from Arrow.com. 8 CGH40010 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733
CGH40010 - Arrow
WebDownload datasheet(2Mb) CGH40010. 10 W, RF Power GaN HEMT. Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high. electron mobility transistor (HEMT). The … WebCGH40010F: Manufacturer: Cree Wolfspeed: Description: RF MOSFET HEMT 28V 440166: Lead Free Status / RoHS Status: Lead free / RoHS Compliant: Quantity Available: 1429 … bryce 16 candles
CGH40010F Wolfspeed, Inc. Discrete Semiconductor …
WebCGH40010F Description TRANS 10W RF GAN HEMT 440166 PKG Manufacturer Cree Inc Datasheet 1. CGH40010F.pdf (14 pages) Specifications of CGH40010F Mfg Application Notes Thermal Performance Guide Transistor Type HEMT Frequency 0Hz ~ 6GHz Gain 14.5dB @ 3.7GHz Voltage - Rated 84V Current Rating 3.5A Current - Test 200mA … WebThe output used a transmitting type active integrated antenna. Power amplifier was design and simulated using Cree GaN FET CGH40010F transistor device at 2.62-GHz operating frequency. The performance of the network has improved by 78% power added efficiency at 30dBm output power. Published in: 2024 Internet Technologies and Applications (ITA) WebThe CGH40010; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high … exceed cf sl 2018